Introduction

Indium Phosphide (InP) Substrate.

III-V compound semiconductor materials are formed by the combination of III-group element indium (In) and V-group element phosphorus (P).

Application characteristics: high saturated electron drift velocity, suitable luminescence wavelength for low-loss optical fiber communication, strong radiation resistance, good thermal conductivity, high photoelectric conversion efficiency, and high bandgap width.

Application scope: Widely used in the manufacture of optical module devices, sensor devices, high-end RF devices, etc.